Browsing by Author "Porras Montenegro, Nelson"
Now showing items 1-4 of 4
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Ga1- xInxAsySb1- y/GaSb spherical quantum dot in a magnetic field
Sánchez Cano, Robert; Porras Montenegro, Nelson (2012-12)Quaternary semiconductor alloys type-I are appropriated materials for heterostructure devices because they provide a natural form to tune the magnitude of the band gap so that it can operate in the mid-infrared (mid-IR) ... -
Magnetoexcitons bound to ionized-donor impurities in GaAs/AlxGa1−xAs quantum wells
Vivas Moreno, Jose Joaquin; Porras Montenegro, Nelson (Elsevier, 2010)La energía de enlace de los excitones de Wannier unidos a las impurezas de donantes ionizados, D+, en GaAs / AlxGa 1−xComo pozos cuánticos, se estudia utilizando la aproximación de masa efectiva dentro de un enfoque ... -
Study of temperature and indium concentration-dependent dielectric constant and electron adffinity effects on the exciton optical transition and binding energy in spherical GaSb-Ga1-xInxAsySb1-y-GaSb quantum dots
Sánchez Cano, Roberto; Porras Montenegro, Nelson (Researchgate, 2010)Hemos estudiado los estados de excitación de orificios pesados en GaSb – GaInAsSb – GaSb tipo-I Puntos cuánticos esféricos, utilizando constante dieléctrica estática dependiente de la temperatura y afinidad electrónica, ... -
Temperature dependence of band gap ratio and Q-factor defect mode in a semiconductor quaternary alloy hexagonal photonic-crystal hole slab
Sánchez Cano, Robert; Porras Montenegro, Nelson (Springer Verlag, 2016-03-10)We present numerical predictions for the photonic TE-like band gap ratio and the quality factors of symmetric localized defect as a function of the thickness slab and temperature by the use of plane wave expansion and the ...
